? semiconductor components industries, llc, 2013 january, 2013 ? rev. 5 1 publication order number: bcw66glt1/d bcw66glt1g, SBCW66GLT1G general purpose transistor npn silicon features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 45 vdc collector ? base voltage v cbo 75 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 800 madc collector current ? pulsed i c 1200 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1), t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in 99.5% alumina. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 23 (to ? 236) case 318 ? 08 style 6 http://onsemi.com marking diagram collector 3 1 base 2 emitter eg = specific device code m = date code* = pb ? free package device package shipping ? ordering information bcw66glt1g sot ? 23 (pb ? free) 3,000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. eg m (*note: microdot may be in either location) SBCW66GLT1G sot ? 23 (pb ? free) 3,000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. bcw66glt3g sot ? 23 (pb ? free) 10,000/tape & reel
bcw66glt1g, SBCW66GLT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 45 ? ? vdc collector ? emitter breakdown voltage (i c = 10 adc, v eb = 0) v (br)ces 75 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current (v ce = 45 vdc, i e = 0) (v ce = 45 vdc, i e = 0, t a = 150 c) i ces ? ? ? ? 20 20 nadc adc emitter cutoff current (v eb = 4.0 vdc, i c = 0) i ebo ? ? 20 nadc on characteristics dc current gain (i c = 100 adc, v ce = 10 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 50 110 160 60 ? ? ? ? ? ? 400 ? ? collector ? emitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? ? ? 0.7 0.3 vdc base ? emitter saturation voltage (i c = 500 madc, i b = 50 madc) v be(sat) ? ? 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? ? 12 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? ? 80 pf noise figure (v ce = 5.0 vdc, i c = 0.2 madc, r s = 1.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db switching characteristics turn ? on time (i b1 = i b2 = 15 madc) t on ? ? 100 ns turn ? off time (i c = 150 madc, r l = 150 ) t off ? ? 400 ns typical characteristics figure 1. collector emitter saturation voltage vs. collector current figure 2. base emitter saturation voltage vs. collector current i c , collector current (ma) i c , collector current (ma) 1000 100 10 1 0.1 0.01 0.1 1 1000 100 10 1 0.1 0.2 0.3 0.5 0.6 0.8 0.9 1.1 1.2 v ce , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 t a = ? 55 c t a = 25 c t a = 150 c 0.4 0.7 1.0 i c /i b = 10 t a = ? 55 c t a = 25 c t a = 150 c
bcw66glt1g, SBCW66GLT1G http://onsemi.com 3 typical characteristics figure 3. dc current gain vs. collector current figure 4. saturation region i c , collector current (ma) i b , base current (ma) 1000 100 10 1 0.1 0.01 0.001 10 100 1000 100 10 1 0.1 0 0.2 0.6 0.8 1.0 1.4 1.8 2.0 figure 5. base ? emitter turn ? on voltage vs. collector current figure 6. capacitance i c , collector current (ma) v r , reverse voltage (v) 1000 100 10 1 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 100 10 1 0.1 1 10 100 figure 7. current gain bandwidth product vs. collector current figure 8. safe operating area i c , collector current (ma) v ce , collector emitter voltage (v) 1000 100 10 1 0.1 10 100 1000 100 10 1 1 10 100 1000 10,000 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(on) , base ? emitter on voltage (v) c, capacitance (pf) f tau , current gain bandwidth product (mhz) i c , collector current (ma) v ce = 2 v t a = ? 55 c t a = 25 c t a = 150 c 0.4 1.2 1.6 t a = 25 c i c = 800 ma 500 ma 200 ma 100 ma 0.6 v ce = 2 v t a = ? 55 c t a = 25 c t a = 150 c f = 1 mhz c ibo c obo v ce = 2 v t a = 25 c 1 s 100 ms 10 ms 1 ms 0.1 ms, 0.01 ms single pulse test at t a = 25 c
bcw66glt1g, SBCW66GLT1G http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bcw66glt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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